Proposals

A new paper on ALD tin oxide growth by Prof. Takoudis group just published in JVSTA

A new paper Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone by the group of Prof. Takoudis at UIC was just published in Journal of Vacuum Science & Technology A. This is the first paper acknowledging our recently funded NSF proposal on tin-based electroactive materials design.